Compound Semiconductors Online: All News

[...] First Solar, Inc. of Tempe, Arizona USA, announced an agreement with Public Service Company of New Mexico ( [...]

[...] First Solar, Inc. has been granted a power purchase agreement (PPA) from the New Mexico Public Regulatory [...]

[...] First Solar, Inc. of Tempe, Arizona USA, has sold a collection of solar projects in Ontario, Canada, [...]

[...] First Solar, Inc. and Belectric Holding, GmbH launched a joint venture (JV). The Germany-based JV, PV [...]

[...] , a fabless provider of radio frequency integrated circuits (RFICs) based in San Diego, California USA, signed a collaborative agreement with Murata Manufacturing Company. The agreement is a multi- [...]

[...] Northrop Grumman Corporation of Redondo Beach, California USA has developed a new gallium nitride (GaN) flange packaged power amplifier (PA), APN180FP. The [...]

[...] International Rectifier Corporation ("IR") of El Segundo, California USA, announced that it has entered into a settlement agreement with Efficient Power Conversion [...]

[...] Avago Technologies based in San Jose, California USA, a supplier of analog interface components, has completed the acquisition of CyOptics, Inc. [...]

[...] Cree, Inc. of Durham, North Carolina USA,today has signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. [...]

[...] RFMD of Greensboro, North Carolina USA, introduced the first 6-inch GaN-on-Silicon Carbide (SiC) wafers for manufacturing RF power [...]

[...] Semprius, Inc. of Durham, North Carolina USA, a maker of high concentration photovoltaic (HCPV) solar modules, has reached 35.5 percent [...]

[...] RFMD of Greensboro, North Carolina USA unveiled its first power doubler amplifier in a multi-chip module to support the new data [...]

[...] , Japan will begin producing six inches (150mm) silicon carbide (SiC) epitaxial wafers for power devices. The company will also start selling a new grade of four-inch (100mm) SiC epitaxial wafers [...]

[...] on a project to lower the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs. Imec's multi-partner GaN-on-Si research and development program gathers companies to [...]

[...] agreement, EPCC will pay royalties to IR on the sale of gallium nitride (GaN) on silicon based power devices from 2015-2023, subject to an ...<br><br>Category: inframaterialsubstrate [...]

[...] TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, released its new gallium nitride (GaN) integrated power [...]

[...] TriQuint Semiconductor, Inc. based in Hillsboro, Oregon USA, announced that it has acquired CAP Wireless of [...]

[...] TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, has introduced its first integrated power amplifier [...]

[...] Investment company, Starboard Value LP and its affiliates, an owner of 8% of TriQuint Semiconductor and one of the its largest shareholders wrote a letter to shareholders. In the letter, [...]

[...] Lights. Energizer reportedly chose the company's copper indium gallium diselenide (CIGS) solar cells because of their flexibility, ruggedness, and light weight. One Million Lights hopes to improve [...]

[...] of III-V compound semiconductor-based materials and devices, including nanowire based solar cells and transistors. Aixtron received the order in ...<br><br>Category: [...]

[...] -Württemberg, ZSW of Stuttgart, Germany has has achieved 20.8 percent efficient CIGS thin-film solar cells. The researchers note that for the first time, CIGS efficiency records have exceeded the [...]

[...] microwave devices for the U.S. aerospace and defense (A&D) markets. Freescale will add new gallium nitride (GaN) RF transistor products to support the A&D market. The company also plans to ... [...]

[...] TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, released its new gallium nitride (GaN) integrated power doubler for the CATV infrastructure. TriQuint's new GaN MMIC [...]

[...] Northrop Grumman Corporation of Redondo Beach, California USA has developed a new gallium nitride (GaN) flange packaged power amplifier (PA), APN180FP. The PA is aimed at military and [...]

[...] Veeco Instruments of Plainview, New York USA, reports that Sanan Optoelectronics Co. Ltd., and KaiStar Lighting Co., Ltd. have each ordered [...]

[...] Veeco of Plainview, New York USA, introduced the GENxplor™ Molecular Beam Epitaxy (MBE) Deposition System. The company is [...]

[...] Nanoelectronics research center imec of Belgium and Veeco Instruments Inc. of Plainview, New York USA, are collaborating on a project to lower the cost of producing gallium nitride on silicon (GaN- [...]

[...] TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, released its new gallium nitride (GaN) integrated power doubler for the CATV infrastructure. [...]

[...] TriQuint Semiconductor, Inc. based in Hillsboro, Oregon USA, announced that it has acquired CAP Wireless of Newbury Park, California. The acquisition also [...]

[...] TriQuint Semiconductor, Inc. of Hillsboro, Oregon USA, has introduced its first integrated power amplifier solution for ‘small cell’ and [...]

[...] Veeco Instruments of Plainview, New York reports that the University of Oklahoma will receive Veeco’s [...]

[...] Veeco Instruments of Plainview, New York USA, reports that Sanan Optoelectronics Co. Ltd., and KaiStar [...]

[...] Nanoelectronics research center imec of Belgium and Veeco Instruments Inc. of Plainview, New York USA, are collaborating on a project to lower the cost of [...]